http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017038598-A1

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filingDate 2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2017038598-A1
titleOfInvention Manufacturing method of cured film, manufacturing method of interlayer insulating film for rewiring layer, and manufacturing method of semiconductor device
abstract Providing a method for producing cured films with excellent corrosion resistance and chemical resistance. The manufacturing method of the interlayer insulation film for rewiring layers including the manufacturing method of this cured film, and the provision of the manufacturing method of a semiconductor device are provided. In the present invention, at least one of a polyimide precursor and a polybenzoxazole precursor and a layer comprising a composition containing an amine generator is heated at a maximum heating temperature of 250 ° C. or less, and the amine content is A method for producing a cured film of 50 to 5,000 ppm is disclosed.
priorityDate 2015-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 29.