http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016092960-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2016092960-A1 |
| titleOfInvention | Silicon carbide semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to provide a silicon carbide semiconductor device having an improved withstand voltage by improving the step coverage of an interlayer insulating film covering a polysilicon electrode and a method for manufacturing the same. A step of forming a gate insulating film on the silicon carbide substrate, a step of forming a polysilicon film on the gate insulating film, and the polysilicon film from among N, P, As, Sb, B, Al, Ar A step of ion-implanting one or more selected dopants, a step of selectively forming a mask on the polysilicon film, and removing an exposed portion of the polysilicon film by isotropic dry etching. Thus, a polysilicon electrode can be formed in which the inclination angle of the skirt sandwiched between the lower surface of the polysilicon electrode in contact with the gate insulating film and the side surface of the polysilicon electrode is 60 ° or less. |
| priorityDate | 2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.