| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C19-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C19-08 |
| filingDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2014136877-A1 |
| titleOfInvention |
High purity 2-fluorobutane |
| abstract |
The present invention provides a high-purity 2-fluorobutane having a purity of 99.9% by volume or more and a butene content of 1000 ppm by volume or less, and the high-purity 2-fluorobutane, This method is used as an etching gas. According to the present invention, high-purity 2-fluorobutane suitable as a plasma reaction gas for semiconductors is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111406083-A |
| priorityDate |
2013-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |