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filingDate 2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2010134511-A1
titleOfInvention Semiconductor device and manufacturing method of semiconductor device
abstract Provided are a semiconductor device which can be manufactured at a high yield and realizes low warpage and a manufacturing method thereof in a semiconductor element-embedded substrate containing a semiconductor element. A core substrate; an insulating layer and a wiring layer provided on at least one layer on each of the first and second surfaces of the core substrate; a via provided on each insulating layer and the core substrate to connect the wiring layers; A semiconductor element mounted on the first surface with the electrode terminal formation surface facing up, and an electrode terminal of the semiconductor element and a wiring layer provided on the first surface, penetrating an insulating layer provided on the first surface. And the minimum wiring pitch of the wiring layers directly connected to the connecting portion is smaller than the minimum wiring pitch of any wiring layer provided on the second surface (FIG. 1).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012253227-A
priorityDate 2009-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.