Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-10674 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4644 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-92244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
filingDate |
2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2012-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-WO2010134511-A1 |
titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
abstract |
Provided are a semiconductor device which can be manufactured at a high yield and realizes low warpage and a manufacturing method thereof in a semiconductor element-embedded substrate containing a semiconductor element. A core substrate; an insulating layer and a wiring layer provided on at least one layer on each of the first and second surfaces of the core substrate; a via provided on each insulating layer and the core substrate to connect the wiring layers; A semiconductor element mounted on the first surface with the electrode terminal formation surface facing up, and an electrode terminal of the semiconductor element and a wiring layer provided on the first surface, penetrating an insulating layer provided on the first surface. And the minimum wiring pitch of the wiring layers directly connected to the connecting portion is smaller than the minimum wiring pitch of any wiring layer provided on the second surface (FIG. 1). |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012253227-A |
priorityDate |
2009-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |