| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-11 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D201-00 |
| filingDate |
2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2008114411-A1 |
| titleOfInvention |
Conductive antireflection film forming material, conductive antireflection film forming method, resist pattern forming method, semiconductor device, and magnetic head |
| abstract |
The present invention suppresses the reflection of ultraviolet rays, has an excellent antistatic effect, is highly sensitive, prevents accumulation of charges even when an electron beam or the like is used as exposure light, and has no pattern loss or misalignment. An object of the present invention is to provide a material for forming a conductive antireflection film and the like that can easily and efficiently form a fine resist pattern or wiring pattern at a low cost with high resolution. The conductive antireflection film-forming material of the present invention is characterized by containing at least a conductive base resin, a crosslinking agent, a thermal acid generator, and a solvent. |
| priorityDate |
2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |