| abstract |
At least one nitrogen-containing substance selected from the group consisting of an ammonia base and an amine compound; an acid; a silicon-containing compound comprising at least one silicon, carbon, and hydrogen; and optionally a surfactant. A post-etching treatment agent for the silicon-based insulating film is used. According to the present invention, an increase in the dielectric constant of the silicon-based insulating film due to etching can be suppressed. |