| abstract |
A wiring layer having a small amount of leakage current, high resistance to EM (electromigration) and high resistance to TDDB (time-dependent dielectric breakdown) can be obtained, and thereby a semiconductor device with low power consumption and high reliability can be manufactured. Provide technology that can The surface hydrophobized film according to the present invention is a surface hydrophobized film that is in contact with the insulating film, and is more hydrophobic than the insulating film at the time of contact, and also in contact with the wiring on the opposite surface, so that sulfur atoms, phosphorus It includes at least one atom selected from the group consisting of an atom and a nitrogen atom. |