http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006118271-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2006118271-A1 |
| titleOfInvention | Etching method, low dielectric constant dielectric film manufacturing method, porous member manufacturing method, etching apparatus and thin film manufacturing apparatus |
| abstract | An etching method using a new type of CVD and an etching apparatus applicable thereto are provided. Using a halogen radical obtained by converting halogen into plasma and a precursor 24 composed of a noble metal component and halogen obtained by etching the noble metal member 11 with the halogen radical, a crystal nucleus composed of the precursor 24 is adsorbed on the substrate 3. And an etching process for anisotropically etching the portion of the substrate 3 where the crystal nuclei are adsorbed in the thickness direction with halogen radicals. |
| priorityDate | 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.