http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004077539-A1

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
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filingDate 2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2004077539-A1
titleOfInvention Etching resistant film and method for manufacturing the same, surface-cured resist pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
abstract It is an object of the present invention to provide a surface-cured resist pattern suitable for forming a fine and high-definition pattern, an efficient manufacturing method thereof, and the like, by curing the surface of a resist pattern inferior in etching resistance so as to be rich in etching resistance. To do. The method for producing a surface-cured resist pattern of the present invention is a method for producing a surface-cured resist pattern whose surface has etching resistance, and is characterized in that an organic compound is selectively deposited on the resist pattern. A mode in which the deposition is performed using a dielectric gas plasma, a mode in which the organic compound deposited on a base material and a target to be processed are arranged to face each other, and the dielectric gas plasma An embodiment in which the organic compound is introduced from the side opposite to the side on which the organic compound is deposited is preferable.
priorityDate 2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 46.