http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6355958-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K15-00 |
| filingDate | 1986-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65108d009bd898493fb3de9af8ca85ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3c64004403495454ec584161943777d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4b543e0b70da14d1bf2a7f062bacf8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d943f55d3b26bf06448b126d7085003e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4759b0913d1a1741089bb7b44a7a1f00 |
| publicationDate | 1988-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6355958-A |
| titleOfInvention | Method and apparatus for cutting ic wiring |
| abstract | PURPOSE: To prevent short circuits between interconnections by projecting a converged charged particle beam on a semiconductor substrate, in which a plurality of the interconnection layers are formed through the upper part of the interconnection layers, forming a hole in the semiconductor substrate and performing etching, thereby removing the interconnection material which is attached to the side wall of the hole. n CONSTITUTION: The aluminum interconnections of a sample 14 comprise an upper interconnection layer 22 and a lower interconnection layer 23. An insulating film 21 is provided between the layers. The sample 14 is introduced in an ion beam machining chamber 2 through a valve 15. The interconnections are cut with an ion beam 18. Then, the sample 14 is moved to a plasma treating chamber 1 through a gate valve 13. For example, etching is performed in a mixed gas plasma atmosphere of CCl 4 and Cl 2 . A sample stage 6 is made to be a grounding electrode. Isotropic etching is performed. Thus, aluminum 24, which is attached on the side wall, is removed without deforming the shape of the machined hole. In this way, short circuits can be prevented. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6661009-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6039000-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7094312-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6497194-B1 |
| priorityDate | 1986-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.