| abstract |
PURPOSE: To obtain the titled material having high etching resistance and high resolution by incorporating a specific material contg. a phenolic derivative to the titled material. n CONSTITUTION: A polymer contg. either one of units shown by formulas I and II is incorporated to the resist material suitable for forming a fine pattern which is applied to the production of a semiconductor IC and a magnetic bubble memory element, etc. In formulas I and II, R 1 and R 9 are each a lower alkylene group, R 2 WR 4 and R 10 WR 12 are each H, OH, CH 3 or CH 2 OH group, R 5 WR 8 are each a lower alkyl group, R 13 is CH 2 or CH 2 OCH 2 group, A is phenol or a phenol derivative having 1W3 substitutes, etc., X is 0W1, Y is 0 or 1-X. Thus, the titled material having the high resolution and the high resistance against the dry-etching in an atmosphere of oxygen is obtd. n COPYRIGHT: (C)1988,JPO&Japio |