| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G8-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G8-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G8-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 |
| filingDate |
1984-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b5feb155ff07301e20730572da8989f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d52843c8775fa9070b6b7b6be813d46 |
| publicationDate |
1986-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S6180245-A |
| titleOfInvention |
Resist composition and pattern forming method |
| abstract |
PURPOSE:To easily form a high accuracy positive type pattern by preparing a resist composition from a specific sensitizing agent and a novolak resin contg. a specific silica. CONSTITUTION:The above described novolak resin is prepared from a structural unit contg. the silica shown by the formulas I and II (wherein R is a hydrogen atom, CH3 group, (n) is 1-3). The titled composition is prepared from the obtd. novolak resin and the sensitizing agent shown by the formula III (wherein R' and R' are each an alkyl and an aryl groups). The titled method is carried out by coating the above described resist composition on a substrate and exposuring and then by dryetching a pictured patten, thereby sufficiently masking the substrate with a cured film of the resist. As the resist composition is a photocuring resin, the fine positive type pattern is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6344652-A |
| priorityDate |
1984-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |