http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63261835-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba62a800dd9ec26820f62b96065a69fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34120285f28a9ad89d73f34e3b2de7c9 |
| publicationDate | 1988-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63261835-A |
| titleOfInvention | Formation of electrode and wiring |
| abstract | PURPOSE: To reduce the deterioration of the interlayer insulating film by performing an patterning by a reactive ion etching (RIE) using a mixed gas of silicon tetrachloride, boron trichloride and oxygen, or trifluorobromomethane as a reaction gas, thereby shaping the cross section of the electrode or wiring into a trapezoid. n CONSTITUTION: A patterning by RIE is performed using a mixed gas of silicon tetrachloride and oxygen, a mixed gas of boron trichloride and oxygen, a mixed gas of silicon tetrachloride and boron trichloride and oxygen, a mixed gas of any one of the mixed gases and chlorine, or trifluorobromomethane as a reaction gas 4a. In RIE, the etching proceeds where the etching exceeds the deposition. With this, the cross-sectional shape of an electrode wiring 5a is made trapezoidal, whereby the deterioration of the interlayer insulating film can be reduced. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07335634-A |
| priorityDate | 1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.