| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate |
1986-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78d5ff5780fb4e75e3a299e2e166c77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daef71aa57fe55ade680be3741d672a0 |
| publicationDate |
1987-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S62260065-A |
| titleOfInvention |
Formation of thin tin oxide film |
| abstract |
PURPOSE:To obtain a thin SnO2 film of high quality on the surface of a substrate at <=200 deg.C by generating plasma of gaseous starting material with an exciting source such as high frequency waves under reduced pressure. CONSTITUTION:Gaseous SnCl4 as starting material is conveyed from a starting material feeding source to the vicinity of a substrate. In this conveying stage, plasma is generated with an exciting source such as high frequency waves, DC voltage, light or microwaves under reduced pressure and the gaseous SnCl4 is activated to form a thin SnO2 film on the substrate. |
| priorityDate |
1986-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |