http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62136579-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f37bc8280d9fab4985ae5b7b7fd7fc6a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1985-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eefe1cee4160c49248319bbdfd7b846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8191681b87b8cc153137823052abfb75 |
| publicationDate | 1987-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62136579-A |
| titleOfInvention | Etching method |
| abstract | PURPOSE: To increase an etching rate without deteriorating a resist material by generating plasma in an atmosphere of a mixture composed of an inert gas and hydrogen and etching tin oxide, etc. n CONSTITUTION: A sample 5 consisting of the tin oxide or a compd. of the tin oxide and indium is installed in an etching chamber. The inert gas and hydrogen are introduced through inlets 8, 9 into the etching chamber. A high-frequency voltage is then impressed to an electrode 2 to generate the plasma by which the sample 5 is etched. The resist material covering the sample 5 is thus hardly deteriorated and the etching rate is increased. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11551938-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784047-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637037-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018142698-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108493152-A |
| priorityDate | 1985-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.