http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62128527-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1985-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_415357ea7956b2f751216eab6abd649b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf5d2ee5a5968f5e280bb503bf774487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95fffffcf02e4782af0b68ea7856ce54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32c1470ca39cf62c911baf0f607e1f77 |
| publicationDate | 1987-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62128527-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To implant ions to a resist without damaging a semiconductor substrate by using a resist holding a high molecular film between a resist, to which a pattern is formed, and the semiconductor substrate, the multilayer resist, and avoiding a direct implantation of irradiation ions to the semiconductor substrate. n CONSTITUTION: The upper section of a semiconductor wafer 10 is spin-coated with a polyimide film 1 as a high molecular film in thickness of 1W2μm. PMMA 2 is spin-coated in 3,000Å thickness as an upper layer resist after baking and pre-baked. A resist pattern is drawn, the PMMA is developed by the mixed liquid of MIBK and IPA, and Si + ion beams 3 are projected. The wafer is dipped into acetone and the PMMA is dissolved, and the polyimide 2 in a section not irradiated is etched, using Si-ion implanting regions 4 implanted into the polyimide 1 as masks through the RIE of 0 2 ions 5. Accordingly, the resist pattern for the polyimide 1 having a high aspect ratio is formed. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0282626-A |
| priorityDate | 1985-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.