http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S618926-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-305 |
| filingDate | 1984-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cd868c37b6f8ba25dfa21e68523f262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49e0402099aa2b938947b56e884cc455 |
| publicationDate | 1986-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S618926-A |
| titleOfInvention | Reactive ion beam etching device |
| abstract | PURPOSE:To obtain an reactive ion beam etching device of good etching characteristics and a long life utilizing a plasma distribution of good uniformity by providing a filament vortically in an inert gas with separating it from a reactive gas. CONSTITUTION:Thermoions generated by heating a vortical tungsten filament 14 activate an inert gas 12 of Ar, Xe and etc. As the filament 14 is shaped flatly and vortically and is arranged symmetrically for a flow of the inert gas 12, the thermoions are generated uniformly. Accordingly, an inert gas plasma is made relatively uniform and it is drawn out by a high voltage for an electrode 16. This inert gas plasma activates a reactive gas 3 of CCl4, CF4 and etc. At this time, distribution of active and reactive gas ions 5 becomes relatively uniform. Consequently, the distribution of reactive ion beams 8 which are obtained by accelerating said gas ions 5 by a negative high voltage applied to an acceleration electrode 7 also becomes uniform and etching of an insulating film and a metallic film on a wafer to be processed 10 can be done uniformly. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100735668-B1 |
| priorityDate | 1984-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.