| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02ff914937eb6ceaee5ca69cc56cbfa7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1984-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a53f1c5a7ad28a75c4c0b0b48f834bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a915b4986ae1f63f7bd0a1f1eb40b887 |
| publicationDate |
1986-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S6126216-A |
| titleOfInvention |
Method for growing compound semiconductor |
| abstract |
PURPOSE:To obtain a compound semiconductor layer of good characteristics by providing a buffer layer of compound semiconductor at low temperature by which migration of atoms of the III-V compound semiconductor is impossible after treating an Si substrate at 800 deg.C or over and then growing the same semiconductor layer at an usual temperature. CONSTITUTION:An Si substrate is treated at 900 deg.C for 5-10min by flowing H2. Nextly the temperature is reduced to 400-600 deg.C while flowing H2 and arsine and trimethyl garium are flown into the H2 to arrange a GaAs buffer layer on (100) plane of the Si substrate. At that temperature, the composing atoms can not migrate on a crystal surface sufficiently. After a buffer layer of about 2,000Angstrom thick or under is arranged, arsine and H2 are flown and the temperature increases to 700-750 deg.C in 5-10min, during which annealing is done. After the annealing, trimethyl garium is flown again on the buffer layer at 700- 750 deg.C to grow GaAs. By this constitution, a III-V compound semiconductor of good crystallizability can be formed continuously on the Si substrate with including the buffer layer and it is advantagesous for the electric power element using a compound semiconductor in heat dissipation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63133616-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6392015-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02178916-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02178915-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6453407-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2637737-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5571748-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0564915-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0564915-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2563781-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5438951-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0723039-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5833749-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02139918-A |
| priorityDate |
1984-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |