http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61255027-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1985-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f338654239647c5bda5cb7c69d50d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9397fb546e1c8720fe8b16204c68806d |
| publicationDate | 1986-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61255027-A |
| titleOfInvention | Dryetching process |
| abstract | PURPOSE:To attain an excellent etching shapes by a method wherein RIE is performed by adding hydrocarbon or fluorocarbon or fluorohydrocarbon base gas in addition to Cl2 or CCl4 as main etching gas for single crystal Si. CONSTITUTION:An Si substrate 21 is covered with a mask 22 and then a reac tive vessel is filled with 80% of etching gas Cl2 and 20% of deposited gas CHF3 performing RIE with specified pressure, flow rate, high frequency power to make a groove 23. At this time, a film 31 is deposited on the vertical sidewall making the film thickness maximum at the central part between upper and lower parts. The maximum thickness is specified to exceed 1,000Angstrom . The active ion 32 reflected in the surface of film 31 is collected in the central part from the sidewall of bottom diminishing the trenching. Next the groove 23 is filled with CVD SiO2 24 making no cavities at all. A taper groove vertical or almost vertical can be made by selecting mixed ratio of Cl2 to CHF3. As for the depositing gas, CH2F2, CH3F, CHCl3, CH2Cl2 and CH3Cl are recommended to be effective. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008198996-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63237530-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6489519-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0344030-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5356515-A |
| priorityDate | 1985-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.