http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61115327-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1984-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dd45243d6f555d35cb860301820d433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3810747cd5d23a68b6dec6d31ad3c53 |
| publicationDate | 1986-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61115327-A |
| titleOfInvention | Dry etching |
| abstract | PURPOSE:To perform etching at the same rate without causing under-cuts, even in the case where high resistance polysilicon and low resistance polysilicon exist mixedly on the same plane, by using a mixed gas consisting of sulfur hexafluoride and flon 11 as an etching gas, and by specifying the flow rate ratio. CONSTITUTION:A mixed gas consisting of SF6 and CCl3F is employed as an etching gas and the etching is done at a flow rate ratio of CCl3F of 30SCCM against SF6 of 70SCCM, being able to attain anisotropic etching without almost resulting in under-cuts. However, above the ratio of CCl3F/(CCl3F+SF6) of 40%, the under-cuts are promoted to become etched cross sections of a drum shape. Moreover, above the ratio of CCl3F/(CCl3F+SF6) of 70%, the etched cross sections are under-cut in an inverted tapered shape. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0382026-A |
| priorityDate | 1984-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.