http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60117242-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-08 |
| filingDate | 1983-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd26d9884f9cb36b6af161adb5a456cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_229a1c617d833b355c2790a7e58bd219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 |
| publicationDate | 1985-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60117242-A |
| titleOfInvention | Micropattern forming material |
| abstract | PURPOSE:To enhance resolution and to form a micropattern by using, as an ionizing radiation-sensitive resist and a photosensitive resist, a compsn. obtained by esterifying a specified ladder type polyorganosiloxane with axidobenzoyl chloride or its deriv. CONSTITUTION:A compsn. to be used as an ionizing radiation-sensitive resist and a photoresist is obtained by esterifying azidobenzoyl chloride or its deriv. with a ladder type polyorganosiloxane represented by the formula in which R1 is phenyl, methyl, or phenyl/methyl, and R2 is hydroxyalkyl or -(-CH2)nOH, and (n) is 1-5. A proper content of azide groups in the ladder type polysiloxane is 0.5- 15mol% of the total monomers used for composing the polymer, and when <0.5 mol%, a cross-linking effect is lessened, and when >15mol%, mechanical strength of the cross-linked resist film lessened. A preferable wt. average mol.wt. of the polymer is in the range of 2,500-7,000, and in this range a good resist film can be obtained by the spin coating method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4722881-A |
| priorityDate | 1983-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.