| abstract |
PURPOSE: To obtain a resin composition which is superior in insulation characteristics and heat resistance and can be used as an insulation layer as it is after it is used as a material to be etched in a lightographic process by containing polyorganosilsesquioxane. n CONSTITUTION: 5W40vol. polyorganosilsequioxane (e.g.; polymethylsilsesquioxane) is dissolved in a solvent such as methyl isobutyl ketone, whereby a resin composition is obtained. Next, this composition is spin coated on a silicon semiconductor substrate and is prebaked in an inert gaseous atmosphere. After it is irradiated with electron beams by using a mask having line space patterns of about 2μm, it is developed by using a solvent such as xylene, whereby a resist layer is formed. When the vapor deposition of electrode metal or the like is carried out by using such composition, the danger of disconnection is less, and the semiconductor device of high reliability is obtained. n COPYRIGHT: (C)1982,JPO&Japio |