http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5989774-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1982-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0270517faae45f87319c88ecdf5e4ee5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bef2b2b41162fb3a997603ca8a9cef92 |
| publicationDate | 1984-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5989774-A |
| titleOfInvention | Dry etching device |
| abstract | PURPOSE: To provide a titled device which prevents the formation of a thin film and permits etching with good reproducibility by installing a member contg. C or a C-contg. compd. in a reaction vessel provided therein with a plasma generator for generating a high-frequency electric discharge with the reactive gas maintained under a reduced pressure. n CONSTITUTION: A work 12 formed on the surface thereof with an Al film is set on the 2nd electrode 11 made of carbon and thereafter a gaseous mixture of CCl 4 and He is introduced 6 into a reaction vessel 1 and is set at a prescribed gaseous pressure while the inside of the vessel is evacuated 7. High frequency electric power having about 0.48W/cm 2 density is impressed between the 1st electrode 2 and the electrode 11 to generate gaseous plasma and the reactive component generated in such a way is acted on the work 12, whereby etching is accomplished. As a result, the formation of a thin film on the inside wall of the reaction vessel 1 and the surfaces of the electrodes 2, 12 is hardly visually observed. No heavy metals, etc. are detected except very slight Cl and F are observed in addition to Al as shown in the fiqure indicating the result of the Auger analysis with said thin film. In other works, the formation of the thin film is prevented and since the corrosion of the work is prevented, the etching with good reproductibility and good patterning accuracy is made possible. n COPYRIGHT: (C)1984,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6489518-A |
| priorityDate | 1982-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.