http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59169140-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1983-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08517e8cd2dc0b0466ad4d1f2cbd1457 |
| publicationDate | 1984-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59169140-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To obtain a method of forming a surface protecting film for gaining a stable element having high reliability by vapor phase etching the surface of a substrate before forming a surface protecting film. CONSTITUTION:After a GaAs crystal surface 8 is plasma etched in a mixture gas plasma atmosphere of AsCl3+H2 or AsH3+Cl2 to remove oxide and ultrafine dusts of a surface layer in a reaction chamber used to form by a plasma CVD method the vapor phase growth of a silicon oxidized film 7, it is switched to a mixture gas plasma of a known SiH4+O2 to vapor phase grow the film 7 on the surface 8. When the plasma etching is advanced by chlorine gas plasma, arsenic compound (AsCl3 or AsH3) gas is contained. Accordingly, As which is readily sublimated like GaAs is particularly isolated from the surface to suppress the production of arsenic cavity. Thereafter, the steps similar to the conventional method are employed. |
| priorityDate | 1983-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.