| abstract |
PURPOSE:To prevent the generation of pattern defects after the material to be processed has been picked out into the atmospheric air by a method wherein, after a plasma etching process has been performed using chlorine gas, a process wherein chlorine remaining on the surface of the material to be processed will be removed is performed. CONSTITUTION:A mask pattern is formed on an aluminum silicon alloy film using photosensitive resin, it is used as the material to be processed, and placed on the electrode in the lower part of a plasma etching vessel having a paralleled flat plate electrode. After the etching vessel has been brought into one atmospheric pressure or below, CCl4 gas and He gas are introduced therein, gas plasma is generated by applying a high frequency voltage while the desired gas pressure is being maintained using an exhaust mechanism, and the alloy film on the part which is not covered by the mask pattern is removed. Subsequently, hydrogen gas is introduced into the etching vessel, and gas plasma is generated by applying high frequency voltage again while the prescribed gas pressure is being maintained by the exhausting mechanism. |