http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5719377-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1980-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02f8fd7c26eb4f3090dd43b3038f363a |
| publicationDate | 1982-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5719377-A |
| titleOfInvention | Plasma treating device |
| abstract | PURPOSE:To etch Al materials to be treated at a uniform speed by providing hollow recesses in the central parts of electrodes to be placed with said materials in plasma etching of Al. CONSTITUTION:In plasma etching of Al which is the electrode of a semiconductor element, parallel plane electrodes 2', 3' are provided within a vacuum vessel 1, and plural pieces of semiconductor wafers 5 are placed on the electrodes 3'. A gaseous CCl4 is introduced as an etching gas into the vessel 1, and is maintained at about 0.1-1.0Torr degrees of vacuum. High frequency voltage is applied between both electrodes 2', 3' from a power source 4, to allow plasma to generate, thereby etching the Al of the wafers 5. At this time, hollow or hollow-curved recesses 9 are beforehand provided in the parts to be placed with the wafers 5 in the central parts of the electrodes 3'. The electrodes 3' are cooled by cooling water 7, but since the central parts of the wafers 5 are not allowed to contact with the electrodes 3', the cooling is slower there than in the end parts and therefore the etching is accomplished uniformly over the entire surface of the Al of the wafers 5. |
| priorityDate | 1980-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5943 |
Total number of triples: 16.