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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
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filingDate 1979-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5efbf45e355389d2a8e5a775d66c75e
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publicationDate 1981-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5638362-A
titleOfInvention Preparation of coating solution for formation of high- purity silica film
abstract PURPOSE: To obtain the titled coating solution efficiently, by reacting a halogenated silane or alkoxysilane with a carboxylic acid or water in an organic solvent in the presence of a catalyst, followed by treating the reaction mixture with an ion exchange resin. n CONSTITUTION: (A) A halogenated silane, e.g., silicon tetrachloride, etc. or alkoxysilane, e.g., methyl orthosilicate, etc. is reacted with (B) a carboxylic acid, e.g., glacial acetic acid, etc. or water in an organic solvent, e.g., methyl alcohol, etc. in the presence of a catalyst, e.g., hydrochloric acid, etc. to prepare a reaction mixture, which is treated with an ion exchange resin to give the desired coating solution. Preferably the above-mentioned reaction mixture is first treated with a strongly basic or weakly basic anion exchange resin and then with strongly acidic cation exchange resin. n USE: Usable for insulating film for electronic parts, protecting film for metal surface or plating surface, or oriented film for liquid crystal cell, etc. n COPYRIGHT: (C)1981,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04226572-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5774370-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6358867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101214091-B1
priorityDate 1979-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.