| abstract |
PURPOSE: To perform plasma etching with excellent reproducibility, by performing sputter etching and plasma etching of aluminum which is internal wiring material of LST. n CONSTITUTION: The lag of the start of plasma etching of aluminum behind the anticipated starting time is corrected. For example, a resist 5 of desired shape is formed on the principal surface of aluminum (or aluminum alloy) film 3 made on a silicon substrate 1. The substrate 1 is placed in an etching chamber, which is evacuated, then an inert gas such as argon is introduced and plasma is generated. Suitable arrangement of the sample and the electrodes for generating plasma causes sputter etching by Ar ions 6, hereby alumina 4 is removed. Subsequently, CCl 4 gas 7 is introduced into the reaction chamber, and the aluminum 3 is plasma etched. Because CCl 4 gas 7 etches only the aluminum 3, the etching starts without being late for the anticipated starting time. n COPYRIGHT: (C)1981,JPO&Japio |