http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5629347-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1979-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde3fae3646712ae98968653f5c492f5 |
| publicationDate | 1981-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5629347-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To completely retain a protective film under an electrode metal and to obtain a miniature electrode pattern in high reliability by forming a resist mask except the electrode pattern thereon and dry etching the electrode metal thereon. CONSTITUTION:An N type epitaxial layer 2 is formed on an N type Si substrate 1, an opening is perforated at an SiO2 film 4, and B is diffused to form a P<+> type layer 3 thereon. The surface is oxidized, P is then diffused to form a PSG film 5 thereon, and an opening is perforated at the layer 3. Then, a resist mask 6 is coated thereon, aluminum film 7 if evaporated thereon to form a resist mask 8 thereon, and the aluminum is plasma etched with CCl4. With the resist 6 as a stop per the PSG5 is completely retained. The masks 6, 8 are removed, are heat treated in N2, to complete the contact therebetween. This configuration does not almost sidewisely etch the aluminum 7 to form a miniature electrode pattern and to com pletely retain the PSG film 5 thereon so as to enhance the reliability. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61220430-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0527965-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0114709-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5884447-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S58111201-A |
| priorityDate | 1979-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.