http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5583235-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 1978-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2207f9cf4d60935339c52f1ce1c5bee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79835a657d1b6c28747993c690ed2fdb |
publicationDate | 1980-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-S5583235-A |
titleOfInvention | Producing semiconductor integrated circuit |
abstract | PURPOSE: To provide a precise copy of a pattern on a semiconductor substrate by using high resolution fine live patterns having a good resistance against dry etching in an ion beam lithography. n CONSTITUTION: Resist material for use in ion beam lithography is formed by using a copolymer of specified chemical structure such as the first monomer I being glycidylmethacrylate which includes epoxy group R 1 , the second monomer II being methylmethacrylate. The copolymer is dissolved into monochlorobenzene and coated on a film such as SiO 2 , polycrystalline Si, or Al, then irradiated with ultraviolet rays through a silica mask with Cr pattern. The pattern is then developed using methyl isobutylketone and methyl ethyl ketone to provide a positive pattern. Plasma or ion beam is used to crosslink the resist and at the same time to etch the substrate, thereby providing a high accuracy fine live pattern without deteriorating the resist pattern. n COPYRIGHT: (C)1980,JPO&Japio |
priorityDate | 1978-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.