http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5512725-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2049707590aefdb998b998adad471f26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1978-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c058d9b25c86ceddab94e157c7e1c35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6e821c2d27ab03d394f333b922491a8 |
| publicationDate | 1980-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5512725-A |
| titleOfInvention | Method of detecting end point of etching |
| abstract | PURPOSE: To make it possible to detect the end point of etching precisely to obtain superior reproducibility by utilizing the brightness modulation of a light emission spectrum caused by chlorine produced within a reaction vessel for use in carrying out etching by means of the glow discharge of a gas containing chlorine. n CONSTITUTION: The end point of etching is automatically detected on the basis of the brightness modulation of a light emission spectrum caused by chlorine produced within a reaction vessel 1 when a metal layer is dryly and selectively etched with the use of a gas containing chlorine for the glow discharge. For instance, a silicon substrate of which the oxidized silicon film thereon is coated with a Al layer where patterns are made is placed on a lower electrode 3 in a reaction vessel 1 werein plasma is made to produce by applying current with high frequency waves between electrodes 2 and 3 while supplying and exhausting the CCl 4 gas using a gas introducing pipe 6. The light emission spectra with wave lengths of 4038 Å and 4044 Å within the vessel 1 are automatically detected at Filter/ photomultiplier 10 confronting a window 9 for observation, and the end point is determined at a point where the Al layer of the spectrum indicate the same brightness prior to etching. n COPYRIGHT: (C)1980,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6184835-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S58117539-A |
| priorityDate | 1978-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.