http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5511167-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2049707590aefdb998b998adad471f26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1978-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25c99eab8f33bfdff7171b1c4a9c07bf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e551d483dd80e66d69e185edc073ef4 |
| publicationDate | 1980-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5511167-A |
| titleOfInvention | Dry etching method |
| abstract | PURPOSE: To carry out etching excellent in uniformity, by combining nonselective sputtering with selective plasma etching and using it, at the time of carrying out dry etching of Al for wiring on the semiconductive substrate. n CONSTITUTION: 1 μm thickness of Al layer 2 is formed on the oxide groundwork insulating film 1 of the surface of Si semiconductive substrate. Al 2 O 3 layer 3 having an ununiform thickness, is formed on the surface of the layer 2. The above substrate is put in the reaction room after forming the photoresist mask 4 on the surface of Al film. Inactive Ar gas is introduced in the reaction room and electricity is discharged in vacuum at not less than 10 -3 torr. and flat etching face having nonselective etching for the material to be treated, is formed. Next, atmosphere of the reaction room is changed from Ar to CCl 4 and plasma etching is carried out under vacuum degree at not more than 10 -1 torr. On this occasion, damage of the photoresist 4 is slight and the film 1 is not influenced, because selectivity of the etching is high and then, flat etching face is obtained. n COPYRIGHT: (C)1980,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06104221-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59205722-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10189537-A |
| priorityDate | 1978-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5943 |
Total number of triples: 19.