http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S54109387-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1978-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_737bebc75a90d2bca3b5b23128e70b3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_042017eaebc2bd742eec9f6c2b975fee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93a0a146b6350a180dcd4a173211fa5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b1f477637c0b89cf1fb5f563335b01 |
| publicationDate | 1979-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S54109387-A |
| titleOfInvention | Etching method |
| abstract | PURPOSE: To make etching speed to desired speed, by using boron trichloride or carbon tetrachloride including 0.1 to 10 vol.% either of chlorine or hydrogen chloride as introduced gas, in forming the Al fine wiring of IC with the plasma etching in the vacuum chamber. n CONSTITUTION: The test piece 20 is mounted on the high frequency electrode 2 or opposing electrode 3 in the vacuum chamber 1, and the chamber 1 is vented with the vacuum pumps 5 to 7. Further, the valve 8 is closed, interrupting the connection with the pumps and the mixing gas of boron trichloride or carbon tetrachloride gas and chlorine is fed to the chamber 1, and it is discharged from the liquid nitrogen traps 10 and 11 incorporating heaters 18 and 19. In this case, the amount of chlorine and hydrogen chrolide mixed is specified to 0.1 to 10 vol. % of the main gas. Further, high frequency voltage is fed from the power supply 21 to the electrode 2, producing glow discharge plasma and etching Al on the test piece 20. Thus, the control of etching speed is made easy while performing under-cut. n COPYRIGHT: (C)1979,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57500399-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0099558-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0076860-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59134833-A |
| priorityDate | 1978-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.