http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1154481-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1997-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1de0822571235aa98eb0b023b1739ce3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b671009684d14f35761d8be915b81bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e034803fafdcce0a53d73e4cf7b4b069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b30eaadbb6bfac0fcdeac5cc4249ea |
| publicationDate | 1999-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1154481-A |
| titleOfInvention | Dry etching method and dry etching apparatus |
| abstract | (57) [Summary] [PROBLEMS] To suppress a microloading effect and a side etch. SOLUTION: After a silicon oxide film 2 is formed on a semiconductor substrate 1, a polysilicon film 3 is deposited and a mask pattern is formed on the polysilicon film 3 by photolithography. A gas comprising nitrogen and hydrogen is added to a mixed gas of a gas containing nitrogen and a gas containing bromine atoms, and the polysilicon film 3 is anisotropically etched by plasma using the mixed gas using the mask pattern as a mask. 2 steps. As described above, a SiN layer having low reactivity is formed on the outermost surface of the polysilicon film 3, and the SiN layer suppresses a thermochemical reaction between Cl and Br radicals and the polysilicon film 3, thereby suppressing side etching. be able to. Further, the reaction proceeds only when an ion bombardment is applied, and the microloading effect can be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6544887-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6881991-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013084694-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6844117-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015050229-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6391791-B1 |
| priorityDate | 1997-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.