http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1145890-A

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filingDate 1997-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be3f618c99360115e71b334a599f9137
publicationDate 1999-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1145890-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Problem] To simplify a process of forming a groove having a different depth and to enable the depth to be independently set. After patterning a silicon oxide film formed on a P-type silicon substrate, an element isolation groove having a wide opening width and a buried layer leading groove are formed simultaneously. The buried layer leading groove 6 is filled with a conductive film such as a tungsten film 8 to form a recess in the element separating groove 5-1. The semiconductor is exposed and etched at the bottom of the element isolation groove 5-1 to form an element isolation groove 5-2 penetrating the buried layer 2.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017126793-A
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Total number of triples: 25.