http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11354499-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1998-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6afd717604d3089c464952416ecbd5f
publicationDate 1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11354499-A
titleOfInvention Method for forming contact holes
abstract (57) [Problem] To provide a method for forming an opening such as a contact hole without causing a bowing or an etch stop. In particular, the present invention provides an optimal method for forming a fine contact hole or the like having an opening diameter of 0.2 μm or less or 0.1 μm or less. A hole opening (3a) is formed in a polysilicon film (3) formed on an insulating film (2) on the surface of a substrate (1), and polysilicon (5) is deposited on an inner surface of the hole opening (3a) to form a hole. After the diameter is reduced, dry etching is performed using the polysilicon film 3 as a mask, and an opening 2a such as a contact hole is formed in the insulating film 2 by using a mixed gas of CHF 3 and CO as an etching gas. In addition, a non-doped silicon oxide film is used for the insulating film 2.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010004087-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875551-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7595236-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053358-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115440657-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6869752-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7122463-B2
priorityDate 1998-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758

Total number of triples: 27.