Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
1998-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6afd717604d3089c464952416ecbd5f |
publicationDate |
1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-H11354499-A |
titleOfInvention |
Method for forming contact holes |
abstract |
(57) [Problem] To provide a method for forming an opening such as a contact hole without causing a bowing or an etch stop. In particular, the present invention provides an optimal method for forming a fine contact hole or the like having an opening diameter of 0.2 μm or less or 0.1 μm or less. A hole opening (3a) is formed in a polysilicon film (3) formed on an insulating film (2) on the surface of a substrate (1), and polysilicon (5) is deposited on an inner surface of the hole opening (3a) to form a hole. After the diameter is reduced, dry etching is performed using the polysilicon film 3 as a mask, and an opening 2a such as a contact hole is formed in the insulating film 2 by using a mixed gas of CHF 3 and CO as an etching gas. In addition, a non-doped silicon oxide film is used for the insulating film 2. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010004087-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615460-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812128-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875551-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7595236-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053358-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115440657-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6869752-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7122463-B2 |
priorityDate |
1998-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |