http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11354496-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_915269922949d81a90260e5cd5d2df40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da43145866b712894e0ba6b8591141d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfe20335f52b1b963802becb06807c56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69e46bff0475937e544246f666af1200 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5736aa17546ef74bb88d3d3f94dcbd57 |
| publicationDate | 1999-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11354496-A |
| titleOfInvention | Dry etching method for semiconductor |
| abstract | (57) [Summary] [PROBLEMS] To provide an effective dry etching method for Al x Ga 1-X N (0 ≦ X ≦ 1) semiconductor. A dry etching method for an Al x Ga 1-x N (0 ≦ X ≦ 1) semiconductor, wherein the Al x Ga 1- x N (0 ≦ X ≦ 1) semiconductor is substantially free of carbon atoms Etching is performed by using a plasma gas of a substance containing chlorine atoms. The above plasma etching, Usually, a parallel electrode type device in which electrodes for applying high frequency power are arranged in parallel and an object to be etched is arranged on the electrodes, This is performed using a cylindrical electrode type device in which electrodes to which high frequency power is applied are arranged in a cylindrical shape, and an object to be etched is arranged in parallel with the cross section of the cylinder, or other devices. The plasma gas of a substance containing substantially no carbon atoms but containing chlorine atoms is, for example, plasma of boron trichloride (BCl 3 ) gas. |
| priorityDate | 1999-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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