| abstract |
PROBLEM TO BE SOLVED: To provide a silica-based film having a low dielectric constant useful as a flattening film or an interlayer insulating film used in the production of a semiconductor device, and a method for forming the same. SOLUTION: This is a silica-based coating for a semiconductor element comprising a fired product of a basic hydrolysis-condensation product of a polyalkoxysilane compound, and is a coating obtained by hydrolyzing and condensing a polyalkoxysilane compound in an organic solvent with a basic catalyst. After applying the liquid on the substrate and drying, it is heated to 350 ° C. or higher, It is formed by firing. |