http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11340194-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e023710614909bb078ce9a80db2ef359 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ff61ec75d642fdd78f54818da096de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f99f2170a8cf3bd7f9051a05f3f19bb |
| publicationDate | 1999-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11340194-A |
| titleOfInvention | Dry etching method and semiconductor device |
| abstract | (57) Abstract: The present invention relates to a dry etching method for a compound semiconductor, and more particularly to provide a hydrocarbon-based dry etching method excellent in low damage property. A second object of the present invention is to provide a semiconductor device manufactured by using the dry etching method of the present invention. SOLUTION: In dry etching of a compound semiconductor using a hydrocarbon-based gas, phosphine or arsine is added to a reaction gas. [Effect] Low damage dry etching can be realized. This is effective in reducing the cost by increasing the reliability of the semiconductor device and increasing the production yield. |
| priorityDate | 1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.