| abstract |
[PROBLEMS] To use a discharge plasma generated under a pressure near the atmospheric pressure, which is industrially advantageous, to reduce the film thickness unevenness of the substrate to be processed by ± 10%. Provided is a normal-pressure plasma processing method that can be suppressed within the range. A reaction gas is introduced into a space sandwiched between parallel plate type electrodes (82a, 82b) at a substantially uniform flow rate of ± 20% or less in flow velocity variation across the electrode width. In order to enable the introduction of such a reaction gas, for example, a swash plate facing the gas introduction direction is provided, and at the same time, the reaction gas is once introduced and diffused into a space that becomes narrower as the distance from the gas introduction port increases. After deflecting the gas flow direction substantially parallel to the traveling direction of the processing object W, has a length larger than the electrode width, In addition, the electrodes 82a, 8a are formed through slits having a substantially constant width in the length direction or uniformly arranged small holes. A gas introduction container I having a structure for blowing out between 2b is used. |