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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
filingDate 1998-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0ab7e25f254f3e7731df3772ec194e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e669092834f95f0a918ba829295fff5b
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publicationDate 1999-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11219926-A
titleOfInvention Method for removing organic contaminants from semiconductor substrate surface
abstract An object of the present invention is to provide a method for removing organic contaminants such as a photoresist, a resist residue, and a dry etching residue generated in all processes related to semiconductor substrate fabrication from a semiconductor substrate surface. A semiconductor substrate is placed in a tank, and the tank is filled with a fluid such as a liquid or a gas. Gas-phase processes using gases use a gas mixture of water vapor, ozone and additives that act as scavengers. Liquid phase processes using liquids use a liquid mixture of water, ozone and additives that act as scavengers, and are kept at a temperature below the boiling point of the liquid.
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