http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11163224-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
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filingDate 1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_deb3316c62ab59b8c4e549aadc46c3e0
publicationDate 1999-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11163224-A
titleOfInvention Epoxy resin composition and semiconductor device
abstract (57) [Summary] [PROBLEMS] A semiconductor package for area mounting, which has less warpage at room temperature and in a soldering process, has excellent reliability such as solder resistance and temperature cycle resistance, and has excellent moisture resistance. To provide an epoxy resin composition for sealing. SOLUTION: The epoxy resin represented by the general formulas (3) and (4) is 20 to 90% by weight in the total epoxy resin, and the melting point is 5%. A crystalline epoxy resin at 0 to 150 ° C. is contained in the total epoxy resin in an amount of 20% by weight or more, the phenol resin curing agent of the general formula (1) is contained in the total phenol resin curing agent in an amount of 20% by weight or more, and the general formula (2) The bismuth compound of 0.05 to 5 An epoxy resin composition for encapsulating a semiconductor, comprising a hardening accelerator and a fused silica powder in an amount of 1% by weight. Embedded image Bi x O y (OH) p (Y -a) q (NO 3) r · nH 2 O (2)
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type http://data.epo.org/linked-data/def/patent/Publication

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