http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11145114-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dab43125cb20dea43d9ecf6c8c3894d4
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 1998-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd97100da8972c6b3d6e771274a56075
publicationDate 1999-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11145114-A
titleOfInvention Excellent etching method
abstract PROBLEM TO BE SOLVED: To provide an excellent plasma-enhanced oxide etching which increases the etching selectivity of an oxide with respect to other substances. An excellent oxide etching method using an etching gas mixture containing CF 4 / C 4 F 8 / CO / Ar / N 2 . Further, by adding a cleaning step during the etching operation of the present invention, most of the polymer deposited during the etching operation can be removed, thereby preventing the etch stop phenomenon. Moreover, the presence of N 2 in the etching gas mixture, it is possible to prevent the polymer is formed on the sidewalls of the etched contact opening. Thus, when the metal is subsequently deposited in the opening to form a self-aligned silicide layer, the polymer does not react with the metal atoms to form a high resistance material on the sidewalls of the opening. Thereby, the reliability of the device can be maintained.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6686296-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1085563-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1085563-A3
priorityDate 1997-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.