| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2822 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
1998-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eef2605505c4b40544458ad60af497d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b028f410456d2d5a380e0e00e0690b9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c55d0b1650d44e911b235b6afd79fc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c68b18281b78bd1209948b2c95da426 |
| publicationDate |
1999-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11126902-A |
| titleOfInvention |
Method for forming a high dielectric constant metal oxide |
| abstract |
PROBLEM TO BE SOLVED: To realize a metal gate structure in which a dominant capacitance effect of a silicon dioxide layer is minimized. A method for forming a metal gate (20) structure begins by providing a semiconductor substrate (12). The semiconductor substrate (12) is cleaned to reduce trap sites. A nitride layer (14) having a thickness of less than approximately 20 angstroms is formed on the substrate (12). This nitride layer prevents oxide formation at the substrate interface and has a dielectric constant greater than 3.9. Nitride layer (1 After the formation of 4), a metal oxide layer (16) having a dielectric constant value greater than approximately 8.0 is formed on the nitride layer (14). A metal gate (20) is formed over the nitride layer, thereby leaving the remaining composite gate dielectric (14 and 1). 6) has a higher physical thickness but a higher performance equivalent oxide thickness (EOT). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009278131-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020515071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100743618-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002343965-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7033958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008521249-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7601623-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008518487-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008078675-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4639000-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7429777-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008034563-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004152920-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7488640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007088122-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008541487-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8203189-B2 |
| priorityDate |
1997-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |