Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28097 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
filingDate |
2005-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2008518487-A |
titleOfInvention |
Method of manufacturing a semiconductor device having a high dielectric constant gate dielectric layer and a silicide gate electrode |
abstract |
A method of manufacturing a semiconductor device according to the present invention includes a step of forming a high dielectric constant gate dielectric layer on a substrate, a step of forming a barrier layer on the high dielectric constant gate dielectric layer, and a silicide completely on the barrier layer. Forming a stepped gate electrode. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010129978-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011171737-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012504326-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010116587-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008141178-A |
priorityDate |
2004-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |