abstract |
PROBLEM TO BE SOLVED: To provide a siliceous film having a small relative dielectric constant, and to provide a semiconductor device and a coating composition containing the siliceous film. A low dielectric constant siliceous film formed by heating and firing an aluminum-containing polysilazane film. A semiconductor device comprising the siliceous film as an interlayer insulating film. A coating composition comprising an organic solvent solution containing aluminum-containing polysilazane. |