http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1070112-A

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filingDate 1997-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19b3c47b43139904020ca9bc728a0bec
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publicationDate 1998-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1070112-A
titleOfInvention Apparatus and method for cleaning semiconductor processing chamber surface
abstract (57) [Problem] To prevent contamination of a semiconductor by deposits remaining in a chamber. SOLUTION: The temperature of a temperature-controlled ceramic liner 102 near the surface of a chamber 100 is set to reduce the formation of deposits on the surface of the liner 102 during the processing of a semiconductor substrate or to reduce the temperature of the liner 1. 02 is set for the purpose of accelerating the removal of deposits from the surface. Some deposits accumulate quickly on the surface of the chamber 100. Since the rate of deposit formation or removal is temperature dependent, the liner 102 can be configured to be able to set the temperature independently at different locations. If there is more than one temperature-controllable liner 102, different temperatures are set depending on the requirements for reducing or removing deposit formation in the area of the chamber protected by each liner. Preferably, plasma generated outside the chamber 100 during substrate processing or cleaning processing is supplied into the chamber 100 through a conduit. At least the inner surface of the conduit that contacts the plasma is comprised of a halogen-containing material, the halogen being selectable in view of the active species passing through the interior of the conduit.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003007674-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019068105-A
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