| abstract |
PROBLEM TO BE SOLVED: To provide a cleaning liquid capable of easily removing a deposited polymer generated in a dry etching process without corroding a metal film in a semiconductor element manufacturing process, and a method of manufacturing a semiconductor element using the same. To provide. SOLUTION: (A) a specific quaternary ammonium salt or a specific organic carboxylic acid ammonium salt or an organic carboxylic acid amine salt, (B) a fluorine-containing compound, (C) a water-soluble or water-miscible organic solvent, and (D) A) a cleaning solution for producing a semiconductor element comprising an aqueous solution containing an inorganic acid or an organic acid, and a resist formed on a substrate having a surface provided with an insulating film layer or a metal conductive film layer, and then via etching by dry etching. This is a method of manufacturing a semiconductor device by sequentially forming holes or metal wiring, ashing with oxidizing plasma, and cleaning with the above cleaning liquid. |