| abstract |
(57) [Summary] With the increase in the density of integrated circuits formed on the surface of a substrate such as a semiconductor wafer, a smaller amount of contamination is an obstacle to improving the yield. Further, in a film forming apparatus, a dry etching apparatus, or the like, an adhered substance is formed on an inner wall, and is often adhered as a foreign substance on a wafer by being peeled off. Therefore, it is necessary to perform cleaning of the wafer and cleaning of the inner wall of the apparatus, which is a major cause of a decrease in throughput. A temperature of a wafer and an inner wall of a device, a plasma distribution, By controlling gas flow, gas components, etc., wafer cleaning, The above problem can be solved by performing wafer cleaning and apparatus cleaning at the same time under the optimum conditions for cleaning the inner wall of the apparatus. |