http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10503242-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4485 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1996-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10503242-A |
| titleOfInvention | Chemical vapor deposition using a precursor |
| abstract | SUMMARY OF THE INVENTION The present invention is a method using either a solid precursor or a liquid precursor suitable for chemical vapor deposition (CVD) including liquid source CVD (LSCVD) for forming a semiconductor film. Using the method of the present invention, the precursor is dissolved in a solvent. This solvent is usually selected from inorganic compounds which do not have an extremely high vapor pressure at room temperature and which can be liquefied by a combination of pressure and cooling. The solution thus formed is then sent to the CVD chamber at high pressure and / or low temperature. In CVD, the solution evaporates at high temperature and low pressure at the entrance to the chamber, and the precursor, in gaseous form, forms a product with the reactive gas which is deposited as a thin film on a semiconductor wafer. In LSCVD, a liquid enters a chamber, contacts a wafer, evaporates, producing a product that is deposited as a thin film on the wafer surface. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014039045-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399056-B2 |
| priorityDate | 1995-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.